MGFS38E3336-01 Datasheet, Mitsubishi Electric Semiconductor

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* InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Power Detec.

IEEE802.16-2004 IEEE802.16e-2005 GND 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc1, Vcb Vc2 Vc3 Vc4 Pout Vdet GND Vref V.

MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. 4.0 DIM in mm 1.0 FEATURES
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* InGaP HBT Device 5V Operation 28.5dBm Linear Output Power (64QAM, EVM=2.5%) 35dB Linear Gain Integrated Output Powe.